environmentally stable anisotropic transition l trichalcogenide material zrs3 is available at 2dsemiconductors usa. zrs3 is a layered material like mos2 and other layered systems, except that it exhibits highly anisotropic crystalline structure and material properties (like res2 or tis3). the presence of the crystalline anisotropy results in direction dependent properties like thermal conductivity, electronic mobility, and excitonic binding energies. in a typical order, a large number of layered needle like sheets are contained in a capsule sealed under argon environment. crystals have been characterized by tem, xps, sims, raman, and xrd and possess perfect 1:3 stoichiometry and defect density less than 1 defects / 10,000 unit cells.

　　crystal size ~ 0.4-0.6 cm

　　material characteristics

　　thermoelectric ir semiconductor

　　high carrier mobility semiconductor

　　2d anisotropic semiconductor

　　2d catalytic material

　　related literature

　　single layer of mx3 (m = ti, zr; x = s, se, te): a new platform for nano-electronics and optics; phys.chem.chem.phys 2015, 17, 18665

　　angle resolved vibrational properties of anisotropic transition l trichalcogenide nanosheets; nanoscale, 2017,9, 4175-4182