CVD Graphene/CVD Hexagonal Boron Nitride heterostructure on SiO2/Si wafer

　　Properties of Graphene/h-BN Film:

　　Single Layer Graphene Film on Single Layer h-BN Film transferred onto 285 nm (p-doped) SiO2/Si wafer

　　Size: 1cmx1cm; 8 pack

　　The thickness and quality of each film is controlled by Raman Spectroscopy

　　The coverage of this product is about 98%

　　The films are continuous, with minor holes and organic residues

　　High Crystalline Quality

　　The graphene film is premodominantly single layer (more than 95%) with occasional small multilayer islands (less than 5% bi-layers)

　　Sheet Resistance: 430-800 Ω/square

　　Properties of Silicon/Silicon Dioxide Wafers:

　　Oxide Thickness: 285 nm

　　Oxide Thickness: 285 nm

　　Color: Violet

　　Wafer thickness: 525 micron

　　Resistivity: 0.001-0.005 ohm-cm

　　Type/Dopant: P/Boron

　　Orientation: <100>

　　Front Surface: Polished

　　Back Surface: Etched