晶體尺寸：10毫米

　　電學(xué)性能：半導(dǎo)體，拓?fù)浣^緣體，熱電性

　　晶體結(jié)構(gòu)：六邊形

　　晶胞參數(shù)：a = b = 0.425nm，C = 3.048nm，α=β= 90°γ= 120

　　晶體類型：合成

　　晶體純度：＞99.995%

　　表征方法：XRD、拉曼、EDX

　　X-ray diffraction on a Sb2Te3 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 7 XRD peaks correspond, from left to right, to (00l) with l = 6, 9, 12, 15, 18, 21, 24

　　Powder X-ray diffraction (XRD) of a single crystal Sb2Te3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

　　Stoichiometric analysis of a single crystal Sb2Te3 by Energy-dispersive X-ray spectroscopy (EDX).

　　Raman spectrum of a single crystal Sb2Te3. Measurement was performed with a 785 nm Raman system at room temperature.