Thickness :Capacitive Sensors(電容探頭)
Resistivity :Eddy Current Principle(渦流探頭)
Dopant :Type Surface Photo Voltage System(表面光電壓法)
MX 608
晶圓尺寸Wafer Size:100/125/150/200mm
厚度Thickness :500-800 µm(300-600 µm可選)
電阻率Resistivity:0.001 – 200 Ohm·cm
MX6012
晶圓尺寸Wafer Size:200/300mm
厚度Thickness :600-900 µm
電阻率Resistivity:0.001 – 200 Ohm·cm



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